maximum ratings: (t c =25c unless otherwise noted) symbol TIP31 TIP31a TIP31b TIP31c units collector-base voltage v cbo 40 60 80 100 v collector-emitter voltage v ceo 40 60 80 100 v emitter-base voltage v ebo 5.0 v continuous collector current i c 3.0 a peak collector current i cm 5.0 a continuous base current i b 1.0 a power dissipation p d 40 w power dissipation (t a =25c) p d 2.0 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 62.5 c/w thermal resistance jc 3.13 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i ceo v ce =30v (TIP31, TIP31a) 0.3 ma i ceo v ce =60v (TIP31b, TIP31c) 0.3 ma i ces v ce =rated v ceo 0.2 ma i ebo v eb =5.0v 1.0 ma bv ceo i c =30ma (TIP31) 40 v bv ceo i c =30ma (TIP31a) 60 v bv ceo i c =30ma (TIP31b) 80 v bv ceo i c =30ma (TIP31c) 100 v v ce(sat) i c =3.0a, i b =375ma 1.2 v v be(on) v ce =4.0v, i c =3.0a 1.8 v h fe v ce =4.0v, i c =1.0a 25 h fe v ce =4.0v, i c =3.0a 10 50 h fe v ce =10v, i c =0.5a, f=1.0khz 20 f t v ce =10v, i c =0.5a, f=1.0mhz 3.0 mhz t on i c =1.0a, i b1 =i b2 =0.1a, r l =30 0.3 s t off i c =1.0a, i b1 =i b2 =0.1a, r l =30 1.0 s TIP31 TIP31a TIP31b TIP31c silicon npn power transistors description: the central semiconductor TIP31 series devices are silicon npn epitaxial-base power transistors designed for power amplifier and high speed switching applications. marking: full part number to-220 case r0 (12-june 2014) www.centralsemi.com
TIP31 TIP31a TIP31b TIP31c silicon npn power transistors to-220 case - mechanical outline lead code: 1) base 2) collector 3) emitter tab) collector marking: full part number www.centralsemi.com r0 (12-june 2014)
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